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【討論】MOS驅(qū)動芯片的設(shè)計考慮

怎樣根據(jù)MOS來選取合適的驅(qū)動芯片,芯片技術(shù)指標中那些與時間相關(guān)的參數(shù)到底有哪些影響,芯片內(nèi)部的功耗如何計算,為什么把芯片的輸入、或輸出通過耦合電容、驅(qū)動變壓器后波形存在了各種各樣的問題,各種功率拓撲到底應(yīng)該怎樣設(shè)計驅(qū)動電路等.
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2010-08-02 13:15

先搶沙發(fā)

然后頂啊

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2010-08-02 23:07

這是一種常用驅(qū)動芯片的內(nèi)部結(jié)構(gòu)圖:

 

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2010-08-02 23:21

1。與時間相關(guān)的指標

1。1 上升與下降時間

For the Rising time tr and Falling time tf are governed by three factors. These are operating temperature, supply voltage Vdd, and output load. Since the low side gate drivers were designed to drive power MOSFETs the output load is expressed in Farads. This is due to the fact that a MOSFET gate looks like a capacitor to the driving device, which is actually appears as a variable nonlinear capacitance. The rising time, tr, is defined as the period from 10% to 90% of output rail-to-rail level to supply source Vdd, while the falling time, tf, is defined as the period from 90% to 10% of output rail-to-rail level to supply source Vdd, both on Enable active, as shown in Fig. 1.

The rising and falling time is the function of output load Cload, supply voltage Vdd, and operating temperature. Little can be done to lower the rising and falling time except for keeping the device temperature low and choosing Cload as small as possible. There are several factors associated with the rising and falling times. In general, the rising and falling times are not equal creating a small asymmetry in the output waveform. This is due to having a P-channel device source current and an N-channel sink current from the load at the output stage. P-channels do not perform as well as N types, so this does not make the P equal to the N in dynamic performance. This difference is most obvious at higher loads. Meanwhile, rising and falling times also determine the minimum pulse width in that if an input pulse has a width that is less than the sum of the rising and falling times the output can’t make a full transition.

說白了,上升與下降時間是針對輸出講的,也就是驅(qū)動輸出10%-90%之間的時間延遲。

 

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roc19850
LV.5
5
2010-08-03 09:50
@52football
1。與時間相關(guān)的指標1。1上升與下降時間FortheRisingtimetrandFallingtimetfaregovernedbythreefactors.Theseareoperatingtemperature,supplyvoltageVdd,andoutputload.SincethelowsidegatedriversweredesignedtodrivepowerMOSFETstheoutputloadisexpressedinFarads.ThisisduetothefactthataMOSFETgatelookslikeacapacitortothedrivingdevice,whichisactuallyappearsasavariablenonlinearcapacitance.Therisingtime,tr,isdefinedastheperiodfrom10%to90%ofoutputrail-to-railleveltosupplysourceVdd,whilethefallingtime,tf,isdefinedastheperiodfrom90%to10%ofoutputrail-to-railleveltosupplysourceVdd,bothonEnableactive,asshowninFig.1.TherisingandfallingtimeisthefunctionofoutputloadCload,supplyvoltageVdd,andoperatingtemperature.LittlecanbedonetolowertherisingandfallingtimeexceptforkeepingthedevicetemperaturelowandchoosingCloadassmallaspossible.Thereareseveralfactorsassociatedwiththerisingandfallingtimes.Ingeneral,therisingandfallingtimesarenotequalcreatingasmallasymmetryintheoutputwaveform.ThisisduetohavingaP-channeldevicesourcecurrentandanN-channelsinkcurrentfromtheloadattheoutputstage.P-channelsdonotperformaswellasNtypes,sothisdoesnotmakethePequaltotheNindynamicperformance.Thisdifferenceismostobviousathigherloads.Meanwhile,risingandfallingtimesalsodeterminetheminimumpulsewidthinthatifaninputpulsehasawidththatislessthanthesumoftherisingandfallingtimestheoutputcan’tmakeafulltransition.說白了,上升與下降時間是針對輸出講的,也就是驅(qū)動輸出10%-90%之間的時間延遲。[圖片] 

頂!

繼續(xù)~~~~學習中!

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2010-08-04 02:41

那么,上升或下降時間過慢、或過快又有什么問題?

如果過慢,比較明顯的直觀感覺是功率MOS的開關(guān)損耗將變大;如果過快,可能導致共模傳導、或幅射EMI的問題,但是可以在驅(qū)動輸出與功率MOS串入驅(qū)動電阻,實現(xiàn)開關(guān)損耗與EMI性能之間的均衡。

同時,上升或下降時間也將影響輸入信號的有效最小脈寬,也就是說過短的脈沖,驅(qū)動芯片可能視作無效。

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2010-08-04 02:43

1。2 輸入、輸出延遲時間

The propagation delay could be cataloged as turn-on and turn-off delay times. The turn-on propagation delay from input to output, td1, is defined as the period from input high to 10% of output rail-to-rail level to supply source Vdd, while The turn-off propagation delay from input to output, td2, is defined as the period from input low to 90% of output rail-to-rail level to supply source Vdd, both on Enable active, as shown in Fig. 1. On the other hand, the enable on propagation delay from enable signal to output, td3, is defined as the period from Enable high to 10% of output rail-to-rail level to supply source Vdd, while the enable off propagation delay from enable signal to output, td4, is defined as the period from Enable low to 90% of output rail-to-rail level to supply source Vdd, both on input active, as shown in Fig.2

 The propagation delay time is the function of input signal amplitude Vin, supply voltage Vdd, and operating temperature. Little can be done to lower the delay except for keeping the device temperature low. Need to note that slow rising input signals can give the appearance of long delay times. This comes from the fact that the trip point of the input (about 1.5V) of Schmitt trigger in the driver can often be higher than the 10% point in the waveform.

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2010-08-04 02:44

輸入、輸出的延遲指的是輸入信號有、或無時,輸出端對應(yīng)的延遲時間。有時驅(qū)動芯片還有使能端,使能端的電平由高變低、或由低變高時,同樣會造成輸出驅(qū)動信號的延遲。輸入、輸出的信號傳遞延遲除了跟芯片內(nèi)部設(shè)計相關(guān)以外,如果輸入信號的上升沿、或下降沿過于平緩,也會引起傳遞時間變長。

可以把驅(qū)動芯片看作一個信號傳輸線,延遲時間為零當然最好。但是實際的芯片不可能做到延遲時間為零,因為芯片里面有一堆信號處理電路。這個延遲時間較長的壞處:閉環(huán)系統(tǒng)將存在延時,可能造成系統(tǒng)的不穩(wěn)定;如果兩個通道的驅(qū)動信號有一定的時序要求,可能會造成時序控制的混亂(該沒的驅(qū)號可還有;該有的信號卻無)。比如原邊驅(qū)動與副邊同步整流管一般要有延時,如果這個延時在某個時候失控了,就有可能造成炸管。

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