這里只討論efficiency 與topology的問(wèn)題.各位請(qǐng)把你做過(guò)的或知道的寫出來(lái)供大家參觀.
1.
型號(hào):DCDC
拓?fù)? Forward
測(cè)試條件: Vin:48V(36-75). Vout:5V. Iout:5A.
效率:88%.
2.
型號(hào):DCDC(half brick)
拓?fù)? Forward (active clamp synchronous switch)
測(cè)試條件: Vin:48V(36-75). Vout:5V. Iout:20A.
效率:92%
3.
型號(hào):DCDC(half brick)
拓?fù)? Forward (active clamp synchronous switch)
測(cè)試條件: Vin:48V(36-75). Vout:3.3V. Iout:50A.
效率:90%
4.
型號(hào):DCDC(half brick)
拓?fù)? Forward (active clamp)
測(cè)試條件: Vin:48V(38-58). Vout:24V. Iout:17A.
效率:92%
5.
型號(hào):DCDC(1/4 brick)
拓?fù)? four quadrant (synchronous switch)
測(cè)試條件: Vin:48V(35-75). Vout:2.5V. Iout:20A.
效率:90%
6.
型號(hào):DCDC(1/4 brick)
拓?fù)? half bridge (synchronous switch)
測(cè)試條件: Vin:48V(40-57). Vout:12V. Iout:22A.
效率:95%
7.
型號(hào):DCDC
拓?fù)? buck converter (synchronous switch)
測(cè)試條件: Vin:12V. Vout:1.8V. Iout:90A.
效率:86%.
8.
型號(hào):DCDC
拓?fù)? buck converter (synchronous switch)
測(cè)試條件: Vin:12V. Vout:2.5V. Iout:80A.
效率:91%
9.
型號(hào):ACDC(PFC)
拓?fù)? interleaving converter
測(cè)試條件: Vin:AC220 .Vout:12V. Iout:100A.
效率:84%
10.
型號(hào):ACDC(PFC)
拓?fù)? interleaving converter
測(cè)試條件: Vin:AC220 .Vout:57V. Iout:40A.
效率:92%
11.
型號(hào):ACDC(PFC)
拓?fù)? interleaving converter
測(cè)試條件: Vin:AC220 .Vout:24V. Iout:40A.
效率:90%.
12.
型號(hào):ACDC(PFC)
拓?fù)? LLC
測(cè)試條件: Vin:AC220 .Vout:12V. Iout:10A.
效率:86%
efficiency 與topology
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@liyongzhi
dlinli: foryoureferrence:1156899595.doc
dlinli:
this is a schematic for Forward (active clamp synchronous switch).for your reference.
1156904800.doc
this is a schematic for Forward (active clamp synchronous switch).for your reference.
1156904800.doc
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@liyongzhi
沒(méi)人知道efficiency嗎?我自己頂一個(gè)(去年設(shè)計(jì)的):型號(hào):DCDC75W(halfbrick)拓?fù)?forward(Dioderectifier)測(cè)試條件:Vin:48V.Vout1:+12V.Iout1:6A.Vout2:-12V.Iout2:1.5A.效率:89%.
這么高啊,怎么實(shí)現(xiàn)的?這個(gè)瓦數(shù)我們用推挽做也就不到85的效率,雖然是28V輸入.DIODE用的型號(hào)可以告知嗎?
還有問(wèn)您個(gè)問(wèn)題:自驅(qū)動(dòng)同步整流的空載和同步MOSFET的Q值關(guān)系很大吧/我用一個(gè)高Q和低Q的,空載電流相差上百個(gè)毫安.
還有問(wèn)您個(gè)問(wèn)題:自驅(qū)動(dòng)同步整流的空載和同步MOSFET的Q值關(guān)系很大吧/我用一個(gè)高Q和低Q的,空載電流相差上百個(gè)毫安.
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@timhoo
thanks如果用全橋軟開關(guān)的話效率應(yīng)該會(huì)高點(diǎn),試問(wèn)下您考慮用ITTF的出發(fā)點(diǎn)是什么?對(duì)于這種大電流高功率的電源選型應(yīng)該注意哪方面?
胡來(lái)同志:
在我熟知的幾百個(gè)產(chǎn)品中,全橋電路極少,原因是可靠性較低.大批量生產(chǎn)最重要的是可靠性,有一臺(tái)壞機(jī)賠死你,對(duì)于1000W to 4000W , 我們主要用interleaving converter.ITTF 代替全橋電路是最李想的.thank you!
在我熟知的幾百個(gè)產(chǎn)品中,全橋電路極少,原因是可靠性較低.大批量生產(chǎn)最重要的是可靠性,有一臺(tái)壞機(jī)賠死你,對(duì)于1000W to 4000W , 我們主要用interleaving converter.ITTF 代替全橋電路是最李想的.thank you!
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@dlinli
這么高啊,怎么實(shí)現(xiàn)的?這個(gè)瓦數(shù)我們用推挽做也就不到85的效率,雖然是28V輸入.DIODE用的型號(hào)可以告知嗎?還有問(wèn)您個(gè)問(wèn)題:自驅(qū)動(dòng)同步整流的空載和同步MOSFET的Q值關(guān)系很大吧/我用一個(gè)高Q和低Q的,空載電流相差上百個(gè)毫安.
Dear dlinli:
Below is the reply:
1.efficiency list(cpk)
89.135
89.174
89.180
89.198
89.218
89.179
89.191
89.124
89.122
89.172
89.117
89.276
89.206
89.108
89.156
89.253
89.139
89.076
89.219
89.235
89.193
89.273
89.147
89.065
89.235
89.217
89.311
89.170
89.054
89.290
89.196
89.243
89.157
89.121
89.167
89.004
89.225
89.141
89.215
2. Diode: SKY PWR SMT,2,6A,60V,DPAK,12CWQ06FN
3.Mosfet: NMOS,150V,20A,0.063,DPAK,PSMN063
4.Transformer,inductor:EFD20.
6. Forward (active clamp).
7. MOSFET的Q值大,Lose一定 大,特別高壓Vds(Qds)時(shí).
Below is the reply:
1.efficiency list(cpk)
89.135
89.174
89.180
89.198
89.218
89.179
89.191
89.124
89.122
89.172
89.117
89.276
89.206
89.108
89.156
89.253
89.139
89.076
89.219
89.235
89.193
89.273
89.147
89.065
89.235
89.217
89.311
89.170
89.054
89.290
89.196
89.243
89.157
89.121
89.167
89.004
89.225
89.141
89.215
2. Diode: SKY PWR SMT,2,6A,60V,DPAK,12CWQ06FN
3.Mosfet: NMOS,150V,20A,0.063,DPAK,PSMN063
4.Transformer,inductor:EFD20.
6. Forward (active clamp).
7. MOSFET的Q值大,Lose一定 大,特別高壓Vds(Qds)時(shí).
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@liyongzhi
胡來(lái)同志: 在我熟知的幾百個(gè)產(chǎn)品中,全橋電路極少,原因是可靠性較低.大批量生產(chǎn)最重要的是可靠性,有一臺(tái)壞機(jī)賠死你,對(duì)于1000W to4000W,我們主要用interleavingconverter.ITTF代替全橋電路是最李想的.thankyou!
是因?yàn)槔昧梭w內(nèi)二極管而降低了全橋軟開關(guān)的可靠性了嗎?如果把死區(qū)的時(shí)間調(diào)長(zhǎng)點(diǎn)呢?ITTF很穩(wěn)定,但效率是個(gè)問(wèn)題啊
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@liyongzhi
Deardlinli:Belowisthereply:1.efficiencylist(cpk)89.13589.17489.18089.19889.21889.17989.19189.12489.12289.17289.11789.27689.20689.10889.15689.25389.13989.07689.21989.23589.19389.27389.14789.06589.23589.21789.31189.17089.05489.29089.19689.24389.15789.12189.16789.00489.22589.14189.2152.Diode:SKYPWRSMT,2,6A,60V,DPAK,12CWQ06FN3.Mosfet:NMOS,150V,20A,0.063,DPAK,PSMN0634.Transformer,inductor:EFD20.6.Forward(activeclamp).7.MOSFET的Q值大,Lose一定大,特別高壓Vds(Qds)時(shí).
Great,the data are so charming for me,nearly perfect!
thanks for your messages!Are you in ShenZhen?i am a student from UESTC,hope to be your friends.
thanks for your messages!Are you in ShenZhen?i am a student from UESTC,hope to be your friends.
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@dlinli
areyouhavesomeideason"雙正激"?ihavn'tmeetitbefor,itdiffersfromdoubleswitchforward,canyouexplainitforme,ifpossibleplsuploadaschematic?
用兩個(gè)正激180度互補(bǔ)導(dǎo)通,輸入輸出呈現(xiàn)雙倍開關(guān)管工作頻率關(guān)系,對(duì)那些被動(dòng)器件的尺寸有幫助.它是全橋的一個(gè)很好的替代,如果對(duì)效率沒(méi)特別要求的話.因?yàn)闆](méi)有運(yùn)用開關(guān)管的體內(nèi)二極管,又是正激架構(gòu),可靠性有保證,所以樓主比較推崇這方案
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@timhoo
用兩個(gè)正激180度互補(bǔ)導(dǎo)通,輸入輸出呈現(xiàn)雙倍開關(guān)管工作頻率關(guān)系,對(duì)那些被動(dòng)器件的尺寸有幫助.它是全橋的一個(gè)很好的替代,如果對(duì)效率沒(méi)特別要求的話.因?yàn)闆](méi)有運(yùn)用開關(guān)管的體內(nèi)二極管,又是正激架構(gòu),可靠性有保證,所以樓主比較推崇這方案
昨天找了點(diǎn)相關(guān)資料,是交錯(cuò)級(jí)聯(lián)雙管正激,初級(jí)是兩個(gè)雙管正激,分別工作在相反狀態(tài),如果使用普通的推挽芯片,那么需要驅(qū)動(dòng),考慮到已經(jīng)有雙變壓器和電感,所以考慮用芯片驅(qū)動(dòng),試問(wèn)該用哪款芯片?
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@liyongzhi
Deardlinli:Belowisthereply:1.efficiencylist(cpk)89.13589.17489.18089.19889.21889.17989.19189.12489.12289.17289.11789.27689.20689.10889.15689.25389.13989.07689.21989.23589.19389.27389.14789.06589.23589.21789.31189.17089.05489.29089.19689.24389.15789.12189.16789.00489.22589.14189.2152.Diode:SKYPWRSMT,2,6A,60V,DPAK,12CWQ06FN3.Mosfet:NMOS,150V,20A,0.063,DPAK,PSMN0634.Transformer,inductor:EFD20.6.Forward(activeclamp).7.MOSFET的Q值大,Lose一定大,特別高壓Vds(Qds)時(shí).
問(wèn)問(wèn)你的匝比多少,5VOUT,48VIN的情況下,我現(xiàn)在變壓器發(fā)熱厲害,不知道匝比是否不合適.
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